Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs
نویسندگان
چکیده
Ion implantation, followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the subthreshold behavior based on results obtained from two-dimensional device simulation. An empirical expression is also suggested to describe the subthreshold current including the depletion effect. 2002 Elsevier Science Ltd. All rights reserved.
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T Hreshold V Oltage C Ontrol S Chemes in F Infets
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred ...
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عنوان ژورنال:
- Microelectronics Reliability
دوره 42 شماره
صفحات -
تاریخ انتشار 2002